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HL7851G
GaAlAs Laser Diode
Description
The HL7851G is a high power 0.78 m band GaAlAs laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source for optical disk memories, levelers and various other types of optical equipment. Hermetic sealing of the package assures high reliability.
Features
* * * * Visible light output: p = 785 nm Typ Small beam ellipticity: 9.5:23 High output power: 50 mW (CW) Built-in monitor photodiode
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HL7851G
Absolute Maximum Ratings (TC = 25C)
Item Optical output power Pulse optical output power LD reverse voltage PD reverse voltage Operating temperature Storage temperature Note: Symbol PO PO (pulse) VR (LD) VR (PD) Topr Tstg Rated Value 50 60* 2 30 -10 to +60 -40 to +85
1
Unit mW mW V V C C
1. Maximum 50% duty cycle, maximum 1 s pulse width
Optical and Electrical Characteristics (TC = 25C)
Item Optical output power Threshold current Slope efficiency Operating current LD Operating voltage Lasing wavelength Beam divergence (parallel) Beam divergence (perpendicular) Monitor current Astigmatism Symbol PO Ith Iop Vop p // Is AS Min 50 -- 0.35 -- -- 775 8 18 25 -- Typ -- 45 0.55 140 2.3 785 9.5 23 -- 5 Max -- 70 0.7 170 2.7 795 12 28 150 -- Unit mW mA mW/mA mA V nm deg. deg. A m 40 mW/ I (45 mW) - I (5 mW) PO = 50 mW PO = 50 mW PO = 50 mW PO = 50 mW, FWHM PO = 50 mW, FWHM PO = 5 mW, VR (PD) = 5 V PO = 5 mW, NA = 0.4 Test Conditions Kink free
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HL7851G
Typical Characteristic Curves
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HL7851G
Typical Characteristic Curves (cont)
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